gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 features ? gan on sic depletion - mode hemt transistor ? common - source configuration ? broadband class ab operation ? thermally enhanced cu/mo/cu package ? rohs* compliant ? +50 v typical operation ? mttf = 600 years (t j < 200c) ? ear99 export classification ? msl - 1 description the magx - 003135 - 120l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military radar pulsed applications between 3.1 - 3.5 ghz. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. the magx - 003135 - 120l00 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. * restrictions on hazardous substances, european union directive 2002/95/ec. part number description magx - 003135 - 120l00 120 w gan power transistor magx - 003135 - sb5ppr 3.1 - 3.5 ghz evaluation board ordering information
gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 parameter test conditions symbol min. typ. max. units dc characteristics drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - 0.5 9 ma gate threshold voltage v ds = 5 v, i d = 23 ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5 v, i d = 9 a g m 3.3 - - s dynamic characteristics input capacitance not applicable (input matched) c iss n/a n/a n/a pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 13.4 16 pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 1.4 2.2 pf electrical characteristics: t a = 25c electrical specifications: freq. = 3.1 - 3.5 ghz, t a = 25c parameter symbol min. typ. max. units rf functional tests: p in = 10 w, v dd = 50 v, i dq = 300 ma, pulse width = 300 s, duty = 10% peak output power p out 120 135 - w power gain g p 10.8 11.8 - db drain efficiency d 45 52 - % load mismatch stability vswr - s - 5:1 - - load mismatch tolerance vswr - t - 10:1 - -
gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 absolute maximum ratings 1,2,3,4,5 1. exceeding any one or combination of these limits may cause permanent damage to this device. 2. macom does not recommend sustained operation near these survivability limits. 3. for saturated performance, the following is recommended: (3*v dd + abs(v gg )) <175 v. 4. operating at nominal conditions with t j +200c will ensure mttf > 1 x 10 6 hours. junction temperature directly affects device mttf and should be kept as low as possible to maximize lifetime. 5. junction temperature (t j ) = t c + ? jc * ((v * i) - (p out - p in )). typical transient thermal resistances (i dq = 300 ma, 300 s pulse, 10% duty cycle): a) freq. = 3.1 ghz, ? jc = 0.62 ? c/w t j = 172 ? c (t c = 82 ? c, 48 v, 5.34 a, p out = 120 w, p in = 10.15 w) b) freq. = 3.3 ghz, ? jc = 0.69 ? c/w t j = 183 ? c (t c = 83 ? c, 48 v, 5.37 a, p out = 120 w, p in = 7.50 w) c) freq. = 3.5 ghz, ? jc = 0.67 ? c/w t j = 177 ? c (t c = 84 ? c, 48 v, 5.25 a, p out = 120 w, p in = 7.65 w) parameter limit input power (p in ) 42 dbm drain supply voltage (v dd ) +65 v gate supply voltage (v gg ) - 8 to 0 v supply current (i dd ) 6.7 a absolute maximum junction/channel temperature 200oc pulsed power dissipation at 85 oc 170 w (pulse width = 100 s) 144 w (pulse width = 300 s) operating temperature - 40 to +95oc storage temperature - 65 to +150oc esd min. - machine model (mm) 50 v esd min. - human body model (hbm) 250 v
gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 evaluation board assembly (3.1 - 3.5 ghz) evaluation board impedances freq. (mhz) z if ( ) z of ( ) 3100 5.9 - j4.2 4.1 - j2.4 3300 5.2 - j4.8 4.0 - j2.8 3500 3.9 - j5.0 2.6 - j2.6 correct device sequencing turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 typical performance curves: p in = 10 w, v dd = 50 v, i dq = 300 ma peak output power vs. frequency droop vs. frequency drain efficiency vs. frequency power gain vs. frequency return loss vs. frequency 120 125 130 135 140 145 150 3.1 3.2 3.3 3.4 3.5 peak output power (w) frequency (ghz) 300 us ,10% 100 us, 10% 100 us, 20% 11.0 11.2 11.4 11.6 11.8 12.0 3.1 3.2 3.3 3.4 3.5 power gain (db) frequency (ghz) 300 us, 10% 100 us, 10% 100 us, 20% 48 49 50 51 52 53 3.1 3.2 3.3 3.4 3.5 drain efficiency (%) frequency (ghz) 300 us ,10% 100 us, 10% 100 us, 20% 0.0 0.1 0.2 0.3 0.4 0.5 0.6 3.1 3.2 3.3 3.4 3.5 droop (db) frequency (ghz) 300 us ,10% 100 us, 10% 100 us, 20% -14 -12 -10 -8 -6 -4 3.1 3.2 3.3 3.4 3.5 return loss (db) frequency (ghz) 300 us ,10% 100 us, 10% 100 us, 20%
gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 typical performance curves: v dd = 50 v, i dq = 300 ma output power / drain efficiency vs. input power (pulse width = 300 s, duty = 10%) output power / drain efficiency vs. input power (pulse width = 100 s, duty = 10%) output power / drain efficiency vs. input power (pulse width = 100 s, duty = 20%) 60 90 120 150 180 5 7 9 11 13 peak output power (w) input power (w) 3.1 ghz 3.3 ghz 3.5 ghz 35 40 45 50 55 5 7 9 11 13 drain efficiency (%) input power (w) 3.1ghz 3.3ghz 3.5ghz 60 90 120 150 180 5 7 9 11 13 peak output power (w) input power (w) 3.1 ghz 3.3 ghz 3.5 ghz 35 40 45 50 55 5 7 9 11 13 drain efficiency (%) input power (w) 3.1 ghz 3.3 ghz 3.5 ghz 60 90 120 150 180 5 7 9 11 13 peak output power (w) input power (w) 3.1 ghz 3.3 ghz 3.5 ghz 35 40 45 50 55 5 7 9 11 13 drain efficiency (%) input power (w) 3.1 ghz 3.3 ghz 3.5 ghz
gan on sic hemt pulsed power transistor 120 w peak, 3.1 to 3.5 ghz, 300 s pulse, 10% duty rev. v2 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport magx - 003135 - 120l00 package outline handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride devices are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices.
|
